HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast

　　recoveryanti-paralleldiode

　　Features:

　　TRENCHSTOPTMtechnologyoffering

　　?verylowVCEsat

　　?lowEMI

　　?Verysoft,fastrecoveryanti-paralleldiode

　　?maximumjunctiontemperature175°C

　　?qualifiedaccordingtoJEDECfortargetapplications

　　?Pb-freeleadplating;RoHScompliant

　　?completeproductspectrumandPSpiceModels:

　　Applications:

　　?uninterruptiblepowersupplies

　　?weldingconverters

　　?converterswithhighswitchingfrequency

　　KeyPerformanceandPackageParametersT

　　Parameter Symbol Value Unit

　　Collector-emitter voltage VCE 1200 V

　　DCcollectorcurrent,limitedbyTvjmax

　　TC=25°C

　　TC=100°C

　　IC 80.0

　　40.0A

　　Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 160.0 A

　　TurnoffsafeoperatingareaVCE ≤1200V,Tvj ≤175°C - 160.0 A

　　Diodeforwardcurrent,limitedbyTvjmax

　　TC=25°C

　　TC=100°C

　　IF 40.0

　　20.0

　　A

　　Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 160.0 A

　　Gate-emitter voltage VGE ±20 V

　　Short circuit withstand time

　　VGE=15.0V,VCC ≤600V

　　Allowed number of short circuits < 1000

　　Time between short circuits: ≥ 1.0s

　　Tvj=175°C

　　tSC

　　10

　　μs

　　PowerdissipationTC=25°C

　　PowerdissipationTC=100°C Ptot

　　483.0

　　220.0 W

　　Operating junction temperature Tvj -40...+175 °C

　　Storage temperature Tstg -55...+150 °C

　　Soldering temperature,

　　wave soldering 1.6mm (0.063in.) from case for 10s 260 °C

　　Mounting torque, M3 screw

　　Maximum of mounting processes: 3 M 0.6 Nm

　　ThermalResistance

　　Parameter Symbol Conditions Max.